Search results for "Thermal coefficient"
showing 3 items of 3 documents
Prediction of structural and thermodynamic properties of zinc-blende AlN: molecular dynamics simulation
2004
Abstract Structural and elastic properties of AlN are investigated by using a molecular dynamics simulation based on the Tersoff empirical interatomic potential. Both of zinc-blende and rock-salt structures are discussed. The calculated bulk properties and elastic constants agree well with the available experimental and theoretical data. The Thermodynamic properties in zinc-blende structure are also predicted including the Debye temperature, melting temperature, heat capacity, linear thermal coefficient. This study is helpful to understand the bahviour of physical properties of AlN when the temperature varies.
Electrophysical, Magnetoresistivity and Magneto-optical Properties of Multilayer Materials Based on Nanocrystalline and Amorphous Films
2012
In work is presented to the results of complex investigate of phase formation, thermal resistivite, magnetoresistive and magneto-optical properties of multilayers based Fe and Pd, Ag or Ge, which obtained by sequential condensation of the layers with following thermal annealing. Investigation of phase formation processes of thin film systems and established of correlation between this processes and above-mention physical properties. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35009
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
2018
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …